Formation mechanisms of electrical conductivity and optical properties of ZnO : N film produced by annealing treatment

	Formation mechanisms of electrical conductivity and optical properties of ZnO : N film produced by annealing treatment
其他题名	论文其他题名
	Wang X. H.; Yao B.; Wei Z. P.; Shen D. Z.; Zhang Z. Z.; Lu Y. M.; Zhang J. Y.; Fan X. W.
	2008
发表期刊	Chinese Physics Letters
ISSN	0256-307X
卷号	25 期号:8 页码:2993-2996
摘要	The effects of annealing on the chemical states of N dopant, electrical, and optical properties of N-doped ZnO film grown by molecular beam epitaxy (MBE) are investigated. Both the as-grown ZnO:N film and the film annealed in N(2) are of n-type conductivity, whereas the conductivity converts into p-type conductivity for the film annealed in O(2). We suggest that the transformation of conductivity is ascribed to the change in ratio of the N molecular number on O site (N(2)) O to the N atom number on O site (NO) in ZnO:N films under the various annealed atmosphere. For the ZnO:N film annealed in N2, the percentage content of (N(2)) O is larger than that of NO, i.e. the ratio > 1, resulting in the n-type conductivity. However, in the case of the ZnO:N film annealed in O(2), the percentage content of (N(2)) O is fewer than that of NO, i.e., the ratio < 1, giving rise to the p-type conductivity. There is an obvious difference between low-temperature (80 K) PL spectra of ZnO:N film annealed in N(2) and that of ZnO:N film annealed in O(2). An emission band located at 3.358 eV is observed in the spectra of the ZnO:N film after annealed in N(2), this emission band is due to donor-bound exciton (D(0)X). After annealed in O(2), the PL of the donor-bound exciton disappeared, an emission band located at 3.348 eV is observed, this emission band is assigned to acceptor-bound exciton (A(0)X).
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24843
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang X. H.,Yao B.,Wei Z. P.,et al. Formation mechanisms of electrical conductivity and optical properties of ZnO : N film produced by annealing treatment[J]. Chinese Physics Letters,2008,25(8):2993-2996.
APA	Wang X. H..,Yao B..,Wei Z. P..,Shen D. Z..,Zhang Z. Z..,...&Fan X. W..(2008).Formation mechanisms of electrical conductivity and optical properties of ZnO : N film produced by annealing treatment.Chinese Physics Letters,25(8),2993-2996.
MLA	Wang X. H.,et al."Formation mechanisms of electrical conductivity and optical properties of ZnO : N film produced by annealing treatment".Chinese Physics Letters 25.8(2008):2993-2996.

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