Fabrication of the slanted electrode matrix on tilting 4.5 degrees (111) silicon

	Fabrication of the slanted electrode matrix on tilting 4.5 degrees (111) silicon
其他题名	论文其他题名
	Jia C. P.; Dong W.; Liu C. X.; Zhou J. G.; Zhang X. D.; Sun D. M.; Zang H. D.; Xuan W.; Xua B. K.; Chen W. Y.
	2008
发表期刊	Optik
ISSN	0030-4026
卷号	119 期号:1 页码:23-28
摘要	The slanted low electrode matrix is designed and fabricated on one tilting 4.5 degrees (1 1 1) silicon wafer to reduce the actuating voltage of 8 x 8 micro-electromechanical systems (MEMS) optical switch matrix. Due to compact size of the upper electrode chip and (1 1 1) silicon anisotropic etching in KOH solution, photomask is designed which is to fabricate the slanted low electrode matrix that can be matched with the upper electrode chip and every slanted low electrode has enough space for actuating cantilever. The experimental results show that all of the applied voltages for the full range of actuating micromirrors of 8 x 8 MEMS optical switch matrix are in the range of 67.2 +/- 0.5V. It is demonstrated that the fabricated slanted low electrode matrix has good consistency and every slanted low electrode can be precisely aligned with one-to-one corresponding upper electrodes. (c) 2006 Elsevier GmbH. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24836
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jia C. P.,Dong W.,Liu C. X.,et al. Fabrication of the slanted electrode matrix on tilting 4.5 degrees (111) silicon[J]. Optik,2008,119(1):23-28.
APA	Jia C. P..,Dong W..,Liu C. X..,Zhou J. G..,Zhang X. D..,...&Chen W. Y..(2008).Fabrication of the slanted electrode matrix on tilting 4.5 degrees (111) silicon.Optik,119(1),23-28.
MLA	Jia C. P.,et al."Fabrication of the slanted electrode matrix on tilting 4.5 degrees (111) silicon".Optik 119.1(2008):23-28.

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