Ultralow-Threshold Laser Realized in Zinc Oxide

	Ultralow-Threshold Laser Realized in Zinc Oxide
其他题名	论文其他题名
	Zhu H.; Shan C. X.; Yao B.; Li B. H.; Zhang J. Y.; Zhang Z. Z.; Zhao D. X.; Shen D. Z.; Fan X. W.; Lu Y. M.; Tong Z. K.
	2009
发表期刊	Advanced Materials
ISSN	0935-9648
卷号	21 期号:16 页码:1613-+
摘要	Lasing action is realized in a ZnO/GaN heterojunction by employing a MgO interlayer. The MgO layer can confine electrons in the ZnO layer, while holes can pass through the MgO layer and enter into the n-ZnO layer from the p-GaN layer. The threshold of the lasing action is as low as 0.8 mA.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24802
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhu H.,Shan C. X.,Yao B.,et al. Ultralow-Threshold Laser Realized in Zinc Oxide[J]. Advanced Materials,2009,21(16):1613-+.
APA	Zhu H..,Shan C. X..,Yao B..,Li B. H..,Zhang J. Y..,...&Tong Z. K..(2009).Ultralow-Threshold Laser Realized in Zinc Oxide.Advanced Materials,21(16),1613-+.
MLA	Zhu H.,et al."Ultralow-Threshold Laser Realized in Zinc Oxide".Advanced Materials 21.16(2009):1613-+.