Schottky Barrier Photodetectors Based on Mg0.40Zn0.60O Thin Films

	Schottky Barrier Photodetectors Based on Mg0.40Zn0.60O Thin Films
其他题名	论文其他题名
	Jiang D. Y.; Shan C. X.; Zhang J. Y.; Lu Y. M.; Yao B.; Zhao D. X.; Zhang Z. Z.; Fan X. W.; Shen D. Z.
	2009
发表期刊	Crystal Growth & Design
ISSN	1528-7483
卷号	9 期号:1 页码:454-456
摘要	Wurtzite (Mg0.40Zn0.60O) thin films have been grown on quartz substrates by using the radio frequency magnetron sputtering technique, and a metal-semi-conductor-metal Schottky barrier photodetector has been fabricated from these films. The photodetector exhibits a peak responsivity at 276 nm and a very sharp cutoff wavelength at 295 nm corresponding to the absorption edge of the Mg0.40Zn0.60O thin film. At 2 V bias, the detectivity of the photodetector is 1.1 x 10(12) (cm Hz(1/2))/W at 276 nm, and the ultraviolet-to-visible rejection ratio [R(276 nm)/R(400 nm)] is about 4 orders of magnitude. The photodetector also exhibits a very low dark current of about 100 pA at 2 V bias.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24786
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jiang D. Y.,Shan C. X.,Zhang J. Y.,et al. Schottky Barrier Photodetectors Based on Mg0.40Zn0.60O Thin Films[J]. Crystal Growth & Design,2009,9(1):454-456.
APA	Jiang D. Y..,Shan C. X..,Zhang J. Y..,Lu Y. M..,Yao B..,...&Shen D. Z..(2009).Schottky Barrier Photodetectors Based on Mg0.40Zn0.60O Thin Films.Crystal Growth & Design,9(1),454-456.
MLA	Jiang D. Y.,et al."Schottky Barrier Photodetectors Based on Mg0.40Zn0.60O Thin Films".Crystal Growth & Design 9.1(2009):454-456.

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