Oxygen partial pressure dependence of the properties of MgZnO thin films during annealing

	Oxygen partial pressure dependence of the properties of MgZnO thin films during annealing
其他题名	论文其他题名
	Liu W. W.; Yao B.; Li Y. F.; Li B. H.; Zhang Z. Z.; Shan C. X.; Zhang J. Y.; Shen D. Z.; Fan X. W.
	2010
发表期刊	Journal of Materials Science
ISSN	0022-2461
卷号	45 期号:22 页码:6206-6211
摘要	Undoped n-type MgZnO films were deposited on c-plane sapphire substrates by molecular-beam epitaxy and subsequently annealed in O(2) at different pressures. After annealing at 3.03 x 10(5) Pa, oxygen content in the annealed films show increases and the films transform into p-type conduction. However, the decreases of oxygen content and the increases of electron concentration were obtained while the films annealed at 1.01 x 10(5) Pa or 2.05 x 10(-3) Pa. The changes in intensity of the emission peak located at 2.270 eV are similar to the changes of the oxygen content in the films annealed at different pressures. According to the defect levels and the relationship between photoluminescence spectra and annealing condition, it was suggested that this emission peak was related to interstitial oxygen (O(i)). The obtained p-type conduction is attributed to that the O(i) acceptor can compensate oxygen vacancy and interstitial zinc donor.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24756
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu W. W.,Yao B.,Li Y. F.,et al. Oxygen partial pressure dependence of the properties of MgZnO thin films during annealing[J]. Journal of Materials Science,2010,45(22):6206-6211.
APA	Liu W. W..,Yao B..,Li Y. F..,Li B. H..,Zhang Z. Z..,...&Fan X. W..(2010).Oxygen partial pressure dependence of the properties of MgZnO thin films during annealing.Journal of Materials Science,45(22),6206-6211.
MLA	Liu W. W.,et al."Oxygen partial pressure dependence of the properties of MgZnO thin films during annealing".Journal of Materials Science 45.22(2010):6206-6211.

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