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Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector
其他题名论文其他题名
Chang Y. C.; Shi B.; Li L. H.; Yin J. Z.; Gao F. B.; Du G. T.; Jin Y. X.
2011
发表期刊Solid State Communications
ISSN0038-1098
卷号151期号:24页码:1953-1957
摘要D*(Detectivity), an important figure of merit for photodetectors, is limited by zero bias resistance-area product (R(0)A). R(0)A is determined by Auger recombination mechanism, depending on the composition, temperature, carrier concentration and other parameters of the photodetectors. To investigate R(0)A of In1-xGaxAs infrared photodetectors, in this paper, theoretical analysis of Auger recombination mechanism was carried out in the room temperature, by taking CCCH, CHHL and CHHS into account. The calculated results show that there are significant influences on R(0)A for various parameters in both p- and n-type regions of the devices. With carrier concentration around 10(17) to 10(18) cm(-3), R(0)A of 10(8) Omega cm(2) (n-region) and 10(6) Omega cm(2) (p-region) are obtained for x = 0.47, when thickness and surface recombination velocity of the sample are 5 mu m and 100 m/s, respectively. (C) 2011 Elsevier Ltd. All rights reserved.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/24735
专题中科院长春光机所知识产出
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Chang Y. C.,Shi B.,Li L. H.,et al. Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector[J]. Solid State Communications,2011,151(24):1953-1957.
APA Chang Y. C..,Shi B..,Li L. H..,Yin J. Z..,Gao F. B..,...&Jin Y. X..(2011).Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector.Solid State Communications,151(24),1953-1957.
MLA Chang Y. C.,et al."Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector".Solid State Communications 151.24(2011):1953-1957.
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