Control of N/N(2) species ratio in NO plasma for p-type doping of ZnO

	Control of N/N(2) species ratio in NO plasma for p-type doping of ZnO
其他题名	论文其他题名
	Chen X. Y.; Zhang Z. Z.; Yao B.; Jiang M. M.; Wang S. P.; Li B. H.; Shan C. X.; Liu L.; Zhao D. X.; Zhao H. F.; Shen D. Z.
	2011
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	110 期号:5
摘要	Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al(2)O(3)) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux, and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux, and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626069]
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24726
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Chen X. Y.,Zhang Z. Z.,Yao B.,et al. Control of N/N(2) species ratio in NO plasma for p-type doping of ZnO[J]. Journal of Applied Physics,2011,110(5).
APA	Chen X. Y..,Zhang Z. Z..,Yao B..,Jiang M. M..,Wang S. P..,...&Shen D. Z..(2011).Control of N/N(2) species ratio in NO plasma for p-type doping of ZnO.Journal of Applied Physics,110(5).
MLA	Chen X. Y.,et al."Control of N/N(2) species ratio in NO plasma for p-type doping of ZnO".Journal of Applied Physics 110.5(2011).

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