Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Control of N/N(2) species ratio in NO plasma for p-type doping of ZnO | |
其他题名 | 论文其他题名 |
Chen X. Y.; Zhang Z. Z.; Yao B.; Jiang M. M.; Wang S. P.; Li B. H.; Shan C. X.; Liu L.; Zhao D. X.; Zhao H. F.; Shen D. Z. | |
2011 | |
发表期刊 | Journal of Applied Physics |
ISSN | 0021-8979 |
卷号 | 110期号:5 |
摘要 | Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al(2)O(3)) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux, and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux, and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626069] |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/24726 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Chen X. Y.,Zhang Z. Z.,Yao B.,et al. Control of N/N(2) species ratio in NO plasma for p-type doping of ZnO[J]. Journal of Applied Physics,2011,110(5). |
APA | Chen X. Y..,Zhang Z. Z..,Yao B..,Jiang M. M..,Wang S. P..,...&Shen D. Z..(2011).Control of N/N(2) species ratio in NO plasma for p-type doping of ZnO.Journal of Applied Physics,110(5). |
MLA | Chen X. Y.,et al."Control of N/N(2) species ratio in NO plasma for p-type doping of ZnO".Journal of Applied Physics 110.5(2011). |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Chen-2011-Control of(810KB) | 开放获取 | -- | 浏览 下载 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论