Degenerated MgZnO films obtained by excessive zinc

	Degenerated MgZnO films obtained by excessive zinc
其他题名	论文其他题名
	Liu J. S.; Shan C. X.; Wang S. P.; Li B. H.; Zhang Z. Z.; Shen D. Z.
	2012
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	347 期号:1 页码:95-98
摘要	By introducing excessive zinc during the growth process, degenerated Mg0.46Zn0.54O films have been prepared. The resistivity of the Mg0.46Zn0.54O films is only 0.053 Omega cm, and the electron concentration is 1.0 x 10(19) cm(-3), which is well above the Mott concentration of ZnO (2.9x 10(19) cm(-3)). The origin of such a high electron concentration can be attributed to the excessive zinc in the films. The results reported in this paper provide a route to conductive degenerated MgZnO films, thus may lay a ground for the fabrication of ZnO-based heterostructures or deep ultraviolet optoelectronic devices. (C) 2012 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24673
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu J. S.,Shan C. X.,Wang S. P.,et al. Degenerated MgZnO films obtained by excessive zinc[J]. Journal of Crystal Growth,2012,347(1):95-98.
APA	Liu J. S.,Shan C. X.,Wang S. P.,Li B. H.,Zhang Z. Z.,&Shen D. Z..(2012).Degenerated MgZnO films obtained by excessive zinc.Journal of Crystal Growth,347(1),95-98.
MLA	Liu J. S.,et al."Degenerated MgZnO films obtained by excessive zinc".Journal of Crystal Growth 347.1(2012):95-98.

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