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980-nm High-Power Low-Divergence VCSELs Achieved by Optimization of Current Density Distribution
其他题名论文其他题名
Zhang X.; Ning Y. Q.; Zeng Y. G.; Zhang J. L.; Fu X. H.; Qin L.; Liu Y.; Tong C. Z.; Wang L. J.
2012
发表期刊Ieee Journal of Quantum Electronics
ISSN0018-9197
卷号48期号:1页码:42-48
摘要In this paper, we report the design and fabrication of 980-nm vertical-cavity surface-emitting lasers and arrays that provide high output power and low divergence angle without any additional collimating optics. The influence of the structure of the contact on the current density distribution inside the active region was analyzed using the 3-D finite-element method. Uniform current distribution is achieved by optimizing the diameter of the p-contact, and the consequent improvement in beam divergence and thermal behavior is shown. A low divergence angle of 5.4 degrees is obtained for a single device with continuous-wave (CW) power of 1.46 W at room temperature. The 8x8 array shows a divergence angle of 10.2 degrees at 4 A with a CW power of 1.95 W. In addition, the measured results were compared with the results from devices without optimization of current density distribution.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/24649
专题中科院长春光机所知识产出
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GB/T 7714
Zhang X.,Ning Y. Q.,Zeng Y. G.,et al. 980-nm High-Power Low-Divergence VCSELs Achieved by Optimization of Current Density Distribution[J]. Ieee Journal of Quantum Electronics,2012,48(1):42-48.
APA Zhang X..,Ning Y. Q..,Zeng Y. G..,Zhang J. L..,Fu X. H..,...&Wang L. J..(2012).980-nm High-Power Low-Divergence VCSELs Achieved by Optimization of Current Density Distribution.Ieee Journal of Quantum Electronics,48(1),42-48.
MLA Zhang X.,et al."980-nm High-Power Low-Divergence VCSELs Achieved by Optimization of Current Density Distribution".Ieee Journal of Quantum Electronics 48.1(2012):42-48.
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