Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Electroluminescence from ZnO nanowires homojunction LED grown on Si substrate by simple chemical vapor deposition | |
其他题名 | 论文其他题名 |
Tao P. C.; Feng Q. J.; Jiang J. Y.; Zhao H. F.; Xu R. Z.; Liu S.; Li M. K.; Sun J. C.; Song Z. | |
2012 | |
发表期刊 | Chemical Physics Letters |
ISSN | 0009-2614 |
卷号 | 522页码:92-95 |
摘要 | ZnO nanowires homojunction LED with phosphorus-doped p-ZnO nanowires/n-ZnO nanowires structure was fabricated on Si substrate by simple chemical vapor deposition. The scanning electron microscope show well-aligned undoped ZnO nanowires and phosphorus doped ZnO nanowires with uniform diameter, length, and density were grown perpendicularly on Si substrate. The phosphorus related acceptor emissions were observed from photoluminescence spectra of phosphorus-doped ZnO nanowires at 20 K. Moreover, the current-voltage measurement of ZnO nanowires homojunction LED showed a good rectifying behavior with a turn-on voltage was about 3.8 V and a reverse breakdown voltage was about 6 V. Distinct electroluminescence with ultraviolet and visible emissions was detected from this device at room temperature. (C) 2011 Elsevier B. V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/24584 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Tao P. C.,Feng Q. J.,Jiang J. Y.,et al. Electroluminescence from ZnO nanowires homojunction LED grown on Si substrate by simple chemical vapor deposition[J]. Chemical Physics Letters,2012,522:92-95. |
APA | Tao P. C..,Feng Q. J..,Jiang J. Y..,Zhao H. F..,Xu R. Z..,...&Song Z..(2012).Electroluminescence from ZnO nanowires homojunction LED grown on Si substrate by simple chemical vapor deposition.Chemical Physics Letters,522,92-95. |
MLA | Tao P. C.,et al."Electroluminescence from ZnO nanowires homojunction LED grown on Si substrate by simple chemical vapor deposition".Chemical Physics Letters 522(2012):92-95. |
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