ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate

	ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate
其他题名	论文其他题名
	Gao J.S.; Xu Y.; Wang X.Y.; Wang T.T.
	2005
发表期刊	Guangxue Jingmi Gongcheng/Optics and Precision Engineering
ISSN	1004924X
卷号	13 期号:4 页码:397-402
摘要	ITO (indium oxide doped with tin) thin films were deposited on glass substrates by using ITO pellet with a composition of w(In2O3) = 90% and w(SnO2) = 10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400C for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24556
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Gao J.S.,Xu Y.,Wang X.Y.,et al. ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate[J]. Guangxue Jingmi Gongcheng/Optics and Precision Engineering,2005,13(4):397-402.
APA	Gao J.S.,Xu Y.,Wang X.Y.,&Wang T.T..(2005).ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate.Guangxue Jingmi Gongcheng/Optics and Precision Engineering,13(4),397-402.
MLA	Gao J.S.,et al."ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate".Guangxue Jingmi Gongcheng/Optics and Precision Engineering 13.4(2005):397-402.

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