p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED

	p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED
其他题名	论文其他题名
	Zhang Z. Z.; Wei Z. P.; Lu Y. M.; Shen D. Z.; Yao B.; Li B. H.; Zhao D. X.; Zhang J. Y.; Fan X. W.; Tang Z. K.
	2007
发表期刊	Journal of Crystal Growth
ISSN	220248
卷号	301-302 期号:SPEC. ISS.页码:362-365
摘要	A co-activating route was employed to fabricate ZnO light-emitting diode (LED) by using molecular beam epitaxy. N2 was used as the acceptor dopant source and O2 was used as assistant gas for N2 decomposing more than only oxygen source. Emission spectra of the N2+O2 mixture plasma were monitored in situ in order to adjust growth parameters timely. Under the assistance of O2, N atoms content in the plasma of the mixture shows a significant increase compared to the case without O2 assistance. Electrical measurements of the as-grown p-type ZnO on sapphire show a carrier concentration of 1.218 cm-3 and a mobility approaching 1 cm2 V-1 s-1. A ZnO LED was fabricated by depositing undoped n-type ZnO on the p-type layer. The turn-on voltage at 100 K is about 3.70 V, which approaches the bandgap of ZnO. Electroluminescence spectra show two bands: one is centered at 423 and the other centered at 523 nm, respectively. 2006 Elsevier B.V. All rights reserved.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24531
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang Z. Z.,Wei Z. P.,Lu Y. M.,et al. p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED[J]. Journal of Crystal Growth,2007,301-302(SPEC. ISS.):362-365.
APA	Zhang Z. Z..,Wei Z. P..,Lu Y. M..,Shen D. Z..,Yao B..,...&Tang Z. K..(2007).p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED.Journal of Crystal Growth,301-302(SPEC. ISS.),362-365.
MLA	Zhang Z. Z.,et al."p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED".Journal of Crystal Growth 301-302.SPEC. ISS.(2007):362-365.

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