Improvement of sub-threshold current models for a-Si:H thin-film transistors

	Improvement of sub-threshold current models for a-Si:H thin-film transistors
其他题名	论文其他题名
	Wang L.; Zhu J.; Liu C.; Liu G.; Shao X.; Yan D.
	2007
发表期刊	Solid-State Electronics
ISSN	381101
卷号	51 期号:5 页码:703-707
摘要	The improved sub-threshold drain-source current models of a-Si:H thin-film transistors (TFTs) is demonstrated in this paper. The current-voltage (I-V) characteristics of a-Si:H TFTs are revealed in both forward and reverse sub-threshold region. The I-V characteristics exhibit a strong dependence on the gate-source voltage (VGS) and the drain-source voltage (VDS). The effects of weak electron distribution and a lateral component of the electric field on the a-Si:H TFT characteristics, which are induced by VDS at both front and back interface, are considered in current model. This strong dependence of the sub-threshold current on VDS is attributed to the channel length, drain-gate overlap vicinity, and process condition. Simulated results based on the model exhibit a good agreement with measured experimental data. The proposed model and the modeling process will be very useful for practical TFTs simulation. 2007 Elsevier Ltd. All rights reserved.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24529
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang L.,Zhu J.,Liu C.,et al. Improvement of sub-threshold current models for a-Si:H thin-film transistors[J]. Solid-State Electronics,2007,51(5):703-707.
APA	Wang L.,Zhu J.,Liu C.,Liu G.,Shao X.,&Yan D..(2007).Improvement of sub-threshold current models for a-Si:H thin-film transistors.Solid-State Electronics,51(5),703-707.
MLA	Wang L.,et al."Improvement of sub-threshold current models for a-Si:H thin-film transistors".Solid-State Electronics 51.5(2007):703-707.

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