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Photoluminescence enhancement in Yb3+:Er3+ co-doped eutectic A12O3: SiO2 thin films by 980nm excitation
其他题名论文其他题名
Song Q.; Gao J.; Wang X.; Chen H.; Wang T.; Zheng X.; Li C.R.; Song C.L.
2007
发表期刊Optics Express
ISSN10944087
卷号15期号:7页码:3948-3954
摘要Si nanocrystals (nc-Si) are addressed in the eutectic Al 2O3:SiO2 thin films co-doped with Er3+ and Yb3+ by the laser-induced crystallization (LIC). The thin films are originally synthesized on a silica-on-silicon (SOS) substrate by the microwave electron cyclotron resonance (MW-ECR) plasma source enhanced RF sputtering. Raman spectroscopy has revealed that the strong crystallization occurs with the emergence of the nc-Si in the eutectic A12O 3: SiO2 layer during the liquid phase transformation. The dual wavelength energy transfer mechanism at 800nm and 980nm induced by 980nm excitation in nc-Si and Yb sensitized Er doped system has been proposed and demonstrated. A tenfold photoluminescence enhancement has been obtained from this mechanism. 2007 Optical Society of America.
收录类别EI
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/24527
专题中科院长春光机所知识产出
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GB/T 7714
Song Q.,Gao J.,Wang X.,et al. Photoluminescence enhancement in Yb3+:Er3+ co-doped eutectic A12O3: SiO2 thin films by 980nm excitation[J]. Optics Express,2007,15(7):3948-3954.
APA Song Q..,Gao J..,Wang X..,Chen H..,Wang T..,...&Song C.L..(2007).Photoluminescence enhancement in Yb3+:Er3+ co-doped eutectic A12O3: SiO2 thin films by 980nm excitation.Optics Express,15(7),3948-3954.
MLA Song Q.,et al."Photoluminescence enhancement in Yb3+:Er3+ co-doped eutectic A12O3: SiO2 thin films by 980nm excitation".Optics Express 15.7(2007):3948-3954.
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