Valence-band offset of epitaxial ZnOMgO (111) heterojunction determined by x-ray photoelectron spectroscopy

	Valence-band offset of epitaxial ZnOMgO (111) heterojunction determined by x-ray photoelectron spectroscopy
其他题名	论文其他题名
	Li Y. F.; Yao B.; Lu Y. M.; Li B. H.; Gai Y. Q.; Cong C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Shen D. Z.; Fan X. W.
	2008
发表期刊	Applied Physics Letters
ISSN	36951
卷号	92 期号:19
摘要	The valence-band offset of ZnOMgO (111) heterojunction has been directly measured by x-ray photoelectron spectroscopy. Excluding the strain effect, the valence-band offset is determined to be 0.870.20 eV, and the conduction-band offset EC is deduced to be -3.590.20 eV, indicating that ZnOMgO heterojunction has a type-I band alignment. The conduction-band and valence-band offset of MgOZnO is used to interpret the origination of p -type conduction in undoped Mgx Zn1-x O alloy and deeper acceptor level in undoped and N-doped p -type Mgx Zn1-x O alloy than in ZnO. 2008 American Institute of Physics.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24498
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li Y. F.,Yao B.,Lu Y. M.,et al. Valence-band offset of epitaxial ZnOMgO (111) heterojunction determined by x-ray photoelectron spectroscopy[J]. Applied Physics Letters,2008,92(19).
APA	Li Y. F..,Yao B..,Lu Y. M..,Li B. H..,Gai Y. Q..,...&Fan X. W..(2008).Valence-band offset of epitaxial ZnOMgO (111) heterojunction determined by x-ray photoelectron spectroscopy.Applied Physics Letters,92(19).
MLA	Li Y. F.,et al."Valence-band offset of epitaxial ZnOMgO (111) heterojunction determined by x-ray photoelectron spectroscopy".Applied Physics Letters 92.19(2008).

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Li-2008-Valence-band（509KB）			开放获取	--	浏览下载