Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate

	Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate
其他题名	论文其他题名
	Li B.H.; Yao B.; Li Y.F.; Deng R.; Zhang Z.Z.; Liu W.W.; Shan C.X.; Zhang J.Y.; Shen D.Z.
	2010
发表期刊	Faguang Xuebao/Chinese Journal of Luminescence
ISSN	10007032
卷号	31 期号:6 页码:854-858
摘要	ZnO-based heterojunction light-emitting diodes have been fabricated on p-type GaAs substrate by plasma-assisted molecular beam expitaxy. An electron-blocking MgO layer between thin ZnO film and p-GaAs substrate plays a key role in improving performance of the diodes. Comparing with the n-ZnO/p-GaAs heterojunction, the ZnO/MgO/p-GaAs heterojunction shows a typical diode characteristic with a forward threshold voltage of 3 V. Electroluminescence measurement indicates that the ZnO/MgO/p-GaAs heterojunction has a visible emission band attributed to the defect-related recombination in the ZnO layer and an ultraviolet emission peak.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24473
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li B.H.,Yao B.,Li Y.F.,et al. Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate[J]. Faguang Xuebao/Chinese Journal of Luminescence,2010,31(6):854-858.
APA	Li B.H..,Yao B..,Li Y.F..,Deng R..,Zhang Z.Z..,...&Shen D.Z..(2010).Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate.Faguang Xuebao/Chinese Journal of Luminescence,31(6),854-858.
MLA	Li B.H.,et al."Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate".Faguang Xuebao/Chinese Journal of Luminescence 31.6(2010):854-858.

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