Structural design of vertical-external-cavity surface-emitting semiconductor laser with 920 nm

	Structural design of vertical-external-cavity surface-emitting semiconductor laser with 920 nm
其他题名	论文其他题名
	Liang X.M.; Lu J.K.; Cheng L.W.; Qin L.; Ning Y.Q.; Wang L.J.
	2010
发表期刊	Faguang Xuebao/Chinese Journal of Luminescence
ISSN	10007032
卷号	31 期号:1 页码:79-85
摘要	A vertical-external-cavity surface-emitting 920 nm semiconductor laser ( OP-VECSEL) with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module was constructed and optimized. By the finite element method, self-consistent solutions of electronic and optical equations of the semiconductor laser were realized and the characteristic parameters of OP-VECSEL were calculated. The performances of the especial mode in device, the threshold and the optical-optical conversion efficiency were analyzed by dealing with different structure parameters, including number of QWs (1, 2 and 3 ) in one period, QW depth, width and component of barrier and dimension of the non-absorption layer. The best structure of the laser was chosen.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24462
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liang X.M.,Lu J.K.,Cheng L.W.,et al. Structural design of vertical-external-cavity surface-emitting semiconductor laser with 920 nm[J]. Faguang Xuebao/Chinese Journal of Luminescence,2010,31(1):79-85.
APA	Liang X.M.,Lu J.K.,Cheng L.W.,Qin L.,Ning Y.Q.,&Wang L.J..(2010).Structural design of vertical-external-cavity surface-emitting semiconductor laser with 920 nm.Faguang Xuebao/Chinese Journal of Luminescence,31(1),79-85.
MLA	Liang X.M.,et al."Structural design of vertical-external-cavity surface-emitting semiconductor laser with 920 nm".Faguang Xuebao/Chinese Journal of Luminescence 31.1(2010):79-85.

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