High-pressure Raman investigation of the semiconductor antimony oxide

	High-pressure Raman investigation of the semiconductor antimony oxide
其他题名	论文其他题名
	Geng A.; Cao L.; Wan C.; Ma Y.
	2011
发表期刊	Physica Status Solidi (C) Current Topics in Solid State Physics
ISSN	18626351
卷号	8 期号:5 页码:1708-1711
摘要	The in situ high-pressure behavior of the semiconductor antimony trioxide (Sb2O3) has been investigated by Raman spectroscopy techniques in a diamond anvil cell up to 20 GPa at room temperature. New peaks in the external lattice mode range emerged at a pressure above 8.6-15 GPa, suggesting that the structural phase transition occurred. The pressure dependence of Raman frequencies was obtained. The band at 139 cm-1 (assigned to group mode) has a pressure dependence of -0.475 cm-1/GPa and reveals significant softening at high pressure. 2011 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24434
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Geng A.,Cao L.,Wan C.,et al. High-pressure Raman investigation of the semiconductor antimony oxide[J]. Physica Status Solidi (C) Current Topics in Solid State Physics,2011,8(5):1708-1711.
APA	Geng A.,Cao L.,Wan C.,&Ma Y..(2011).High-pressure Raman investigation of the semiconductor antimony oxide.Physica Status Solidi (C) Current Topics in Solid State Physics,8(5),1708-1711.
MLA	Geng A.,et al."High-pressure Raman investigation of the semiconductor antimony oxide".Physica Status Solidi (C) Current Topics in Solid State Physics 8.5(2011):1708-1711.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Geng-2011-High-press（290KB）			开放获取	--	浏览下载