Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates

	Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates
其他题名	论文其他题名
	Su S.; Yang X.; Hu C.
	2011
发表期刊	Journal of Semiconductors
ISSN	16744926
卷号	32 期号:7
摘要	ZnO nanowall networks were prepared by plasma-assisted molecular beam epitaxy without a catalyst on Si (111) substrates. The nanostructures have preferred orientation along the c axis. The nanostructures are about 10 to 20 nm thick and about 50 nm tall. The planar geometry photoconductive type metal-semiconductor-metal photodetector based on the ZnO nanowall networks exhibits a high and wide response spectrum, and no decrease from 250 to 360 nm. With the applied bias below 5 V, the dark current was below 6 A, and the peak responsivity of 15 A/W was achieved at 360 nm. The UV (360 nm) to visible (450 nm) rejection ratio of around two orders could be extracted from the spectra response. 2011 Chinese Institute of Electronics.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24431
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Su S.,Yang X.,Hu C.. Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates[J]. Journal of Semiconductors,2011,32(7).
APA	Su S.,Yang X.,&Hu C..(2011).Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates.Journal of Semiconductors,32(7).
MLA	Su S.,et al."Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates".Journal of Semiconductors 32.7(2011).

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