In-situ monitoring of AlGaAs growth by reflectance anisotropy spectroscopy in MOCVD

	In-situ monitoring of AlGaAs growth by reflectance anisotropy spectroscopy in MOCVD
其他题名	论文其他题名
	Xu H.W.; Zhang J.L.; Ning Y.Q.; Zeng Y.G.; Zhang X.
	2011
发表期刊	Faguang Xuebao/Chinese Journal of Luminescence
ISSN	10007032
卷号	32 期号:12 页码:1297-1302
摘要	The MOCVD growth of AlxGa1-xAs for application in high-power laser diodes was studied by using time resolved reflectance anisotropy spectroscopy (RAS) and normalized reflectance (NR) were studied. Multi-layer AlxGa1-xAs structures with different Al compisition were grown on GaAs (001) substrates. The most suitable photon energy for monitoring the growth process was investigated. The NR and RAS signals at photon energy near the fundamental band gap showed an oscillatory behavior during the growth. The different contribution of surface-induced optical anisotropy and interface-induced optical anisotropy could be distinguished in situ by RAS transient spectra. The intensities of the RAS and NR signals were strongly dependent on the aluminium composition.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24430
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xu H.W.,Zhang J.L.,Ning Y.Q.,et al. In-situ monitoring of AlGaAs growth by reflectance anisotropy spectroscopy in MOCVD[J]. Faguang Xuebao/Chinese Journal of Luminescence,2011,32(12):1297-1302.
APA	Xu H.W.,Zhang J.L.,Ning Y.Q.,Zeng Y.G.,&Zhang X..(2011).In-situ monitoring of AlGaAs growth by reflectance anisotropy spectroscopy in MOCVD.Faguang Xuebao/Chinese Journal of Luminescence,32(12),1297-1302.
MLA	Xu H.W.,et al."In-situ monitoring of AlGaAs growth by reflectance anisotropy spectroscopy in MOCVD".Faguang Xuebao/Chinese Journal of Luminescence 32.12(2011):1297-1302.

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